FDP047N08-F102 Datasheet

FDP047N08-F102

Datasheet specifications

Datasheet's name FDP047N08-F102
File size 70.016 KB
File type pdf
Number of pages 10

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FDP047N08-F102
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 268W
  • Total Gate Charge (Qg@Vgs): 152nC@10V
  • Drain Source Voltage (Vdss): 75V
  • Input Capacitance (Ciss@Vds): 9415pF@25V
  • Continuous Drain Current (Id): 164A
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.7Ω@80A,10V
  • Package: TO-220
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 164A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.7Ohm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9415pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 268W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
  • Base Part Number: FDP047
  • detail: N-Channel 75V 164A (Tc) 268W (Tc) Through Hole TO-220-3

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